| PART |
Description |
Maker |
| IDT70824S IDT70824S20GB IDT70824S20GI IDT70824S25G |
TRANS NPN W/RES 80 HFE SMINI-3 4K X 16 STANDARD SRAM, 45 ns, PQFP80
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 4K X 16 STANDARD SRAM, 25 ns, PQFP80
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 高K的16顺序访问随机存取存储器（单存取RAM⑩）
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?
|
SRAM
Integrated Device Technology, Inc.
|
| F061254 F051702 F060600 XF0521P |
LAP PLV10 H GRN GRN (TRANSPARENT LENS)
|
E-SWITCH
|
| UM6264 UM6264M-10 UM6264M-10L UM6264-12 UM6264-10 |
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Memory Configuration:64K x 8; Memory Size:32MB; NOR Flash Type:Page Mode Access
8K x 8 CMOS SRAM
|
United Microelectronics Corporation
ETC
UMC[UMC Corporation]
|
| WM72016-6-DGTR |
16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access
|
Cypress Semiconductor
|
| LTC1286CS8PBF LTC1278CN-4 LTC1276CN LTC1282CJ |
Micropower Sampling 12-Bit A/D Converters In S0-8 Packages; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL ACCESS, PDSO8
1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDIP24
1-CH 12-BIT PROPRIETARY METHOD ADC, PARALLEL ACCESS, CDIP24
|
Linear Technology, Corp.
LINEAR TECHNOLOGY CORP
|
| HM514260AJ-10 HM514260AJ-8 HM514260ALJ-7 HM514260A |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262, 144-Word x 16-Bit Dynamic Random Access Memory
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
HITACHI[Hitachi Semiconductor]
ITT, Corp.
|
| MAX11167ETCT MX7672KP10T MX7672LP10T MX7572LCWG05- |
16-Bit, 500ksps/250ksps, ±5V SAR ADCs with Internal Reference in TDFN
High-Speed 12-Bit ADC with External Reference Input 2-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PQCC28
Complete High-Speed CMOS, 12-Bit ADC 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDSO24
CMOS, µP Compatible, 4µs, 8-Bit ADC 1-CH 8-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDSO18
CMOS, 1.3µs, 8-Bit ADC with Voltage Reference and Track/Hold 1-CH 8-BIT FLASH METHOD ADC, PARALLEL ACCESS, PDSO20
8-CH 16-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL ACCESS, PDSO24
|
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| WE256K8-150CC WE256K8-150CCA WE256K8-150CM WE256K8 |
Access time:150 ns; 512K x 8 CMOS EEPROM module
Access time:200 ns; 512K x 8 CMOS EEPROM module
Access time:250 ns; 512K x 8 CMOS EEPROM module
Access time:300 ns; 512K x 8 CMOS EEPROM module
|
White Electronic Designs
|
| CD00191174 STM32F101RET6 STM32F101VET6 STM32F101ZE |
Mainstream Access line, ARM Cortex-M3 MCU with 384 Kbytes Flash, 36 MHz CPU
High-density access line, ARM-based 32-bit MCU
Mainstream Access line, ARM Cortex-M3 MCU with 512 Kbytes Flash, 36 MHz CPU
|
STMicroelectronics
ST Microelectronics
|
| 7106L-QM1-Y 7106G-QM1-Y 7106L-D40-T 7106G-R40-T 71 |
3 ? DIGIT, LCD DISPLAY, A/D CONVERTERS
1-CH PROPRIETARY METHOD ADC, PARALLEL ACCESS, PDSO40
1-CH PROPRIETARY METHOD ADC, PARALLEL ACCESS, PDIP40
|
UNISONIC TECHNOLOGIES CO LTD
|
| UN1210 UN1211 UN1212 UN1213 UN1214 UN1215 UN1216 U |
C; Package/Case:16-SO; Supply Voltage Max:3.6V; Page/Burst Read Access:1.4ms
Flash Memory IC; Access Time, Tacc:110ns; Package/Case:64-BGA; Supply Voltage:3V; Memory Size:64Mbit
Silicon NPN epitaxial planer transistor
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
